| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MD56V62160/H-12TA | 4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 305 K |
| MD56V62400-12TA | 4-bank x 4,194,304-word x 4-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 303 K |
| MS81V06160-12TA | (401,408-word x 16-bit) FIFO memory | distributor | TSOP | 70 | 0°C | 70°C | 266 K |
| MS81V10160-12TA | (664,320-word x 16-bit) FIFO memory | distributor | TSOP | 70 | 0°C | 70°C | 266 K |
| MSM54V24632A-12GS-BK4 | 131,072-word x 32-bit x 2-bank SGRAM without graphics functionc | distributor | QFP | 100 | 0°C | 70°C | 401 K |
| MSM54V25632A-12AGBK4 | 131,072-word x 32-bit x 2-bank synchronous graphics RAM | distributor | QFP | 100 | 0°C | 70°C | 864 K |
| VMB40-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB40-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VMB70-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB70-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
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