Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CXK58257AM-12L | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 2.5uW | Sony-Semiconductor | SOP | 28 | 0°C | 70°C | 291 K |
CXK58257AM-12LL | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 1uW | Sony-Semiconductor | SOP | 28 | 0°C | 70°C | 291 K |
CXK58257AP-12L | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 2.5uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
CXK58257AP-12LL | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 1uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
CXK58257ASP-12L | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 2.5uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
CXK58257ASP-12LL | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 1uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
MT28F128J3RG-12ET | 64Mb Q-flash memory | distributor | TSOP | 56 | 0°C | 70°C | 548 K |
MT28F320J3RG-12ET | 64Mb Q-flash memory | distributor | TSOP | 56 | 0°C | 70°C | 548 K |
MT28F640J3RG-12ET | 64Mb Q-flash memory | distributor | TSOP | 56 | 0°C | 70°C | 548 K |
PALCE16V8Z-12PI | EE CMOS universal programmable array logic, zero power, 12ns | Lattice-Semiconductor-Corporation | DIP | 20 | -40°C | 85°C | 634 K |
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