| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29F040-120JC | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 446 K |
| AM29F040-120JCB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 446 K |
| AM29F040-120JE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -55°C | 125°C | 446 K |
| AM29F040-120JEB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -55°C | 125°C | 446 K |
| AM29F040-120JI | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -40°C | 85°C | 446 K |
| AM29F040-120JIB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | -40°C | 85°C | 446 K |
| AM29F040-120PE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | DIP | 32 | -55°C | 125°C | 446 K |
| BUT11APX-1200 | 1200 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 62 K |
| SMT100-120 | SMT100. Irm = 2microA @ Vrm = 110V,max. Irm = 50microA @ Vr = 120V,max. | distributor | - | - | 0°C | 150°C | 222 K |
| SMT50-120 | SMT50. Irm = 2microA @ Vrm = 108V,max. Irm = 50microA @ Vr = 120V,max. | distributor | - | - | 0°C | 150°C | 221 K |
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