Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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269-A-120-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 120 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
269-A-120-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 120 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
FD2000DU-120 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 48 K |
FG6000AU-120D | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 59 K |
FM1808-120-S | 256Kb bytewide FRAM memory. 120 ns access | distributor | SOP | 28 | -40°C | 85°C | 89 K |
GLT6400M08LL-120ST | 120ns; Ultra low power 512K x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 138 K |
GLT6400M08SL-120ST | 120ns; Ultra low power 512K x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 138 K |
GLT6400M08SLI-120ST | 120ns; Ultra low power 512K x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 138 K |
GLT6400M16LL-120TC | 120ns; Ultra low power 256K x 16 CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 198 K |
GLT6400M16SL-120TC | 120ns; Ultra low power 256K x 16 CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 198 K |
GLT6400M16SLI-120TC | 120ns; Ultra low power 256K x 16 CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 198 K |
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