| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29F400AT-120SCB | 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory | AMD-Advanced-Micro-Devices | SO | - | 0°C | 70°C | 136 K |
| AM29F400AT-120SI | 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory | AMD-Advanced-Micro-Devices | SO | - | -40°C | 85°C | 136 K |
| AM29F400AT-120SIB | 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory | AMD-Advanced-Micro-Devices | SO | - | -40°C | 85°C | 136 K |
| SST29LE020-120-4C-NN | 2 Mbit (256K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | PLCC | 32 | 0°C | 70°C | 326 K |
| SST29VE020-120-4C-NH | 2 Mbit (256K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | PLCC | 32 | 0°C | 70°C | 326 K |
| SST29VE020-120-4C-NN | 2 Mbit (256K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | PLCC | 32 | 0°C | 70°C | 326 K |
| SST29VE020-120-4I-NH | 2 Mbit (256K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | PLCC | 32 | -40°C | 85°C | 326 K |
| SST29VE020-120-4I-NN | 2 Mbit (256K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | PLCC | 32 | -40°C | 85°C | 326 K |
| TG-120 | 8 KV two electrode high-energy spark gap | distributor | - | 2 | - | - | 195 K |
| TG-1208 | 8.3-22.2 KV three electrode high-energy spark gap | distributor | - | 2 | - | - | 195 K |
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