| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29F040-150PE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns | AMD-Advanced-Micro-Devices | DIP | 32 | -55°C | 125°C | 446 K |
| AM29F040-150PEB | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns | AMD-Advanced-Micro-Devices | DIP | 32 | -55°C | 125°C | 446 K |
| BYV32-150 | 150 V, rectifier diode ultrafast | Philips-Semiconductors | SOT | 3 | - | - | 34 K |
| BYV32-150 | 150 V, rectifier diode ultrafast | Philips-Semiconductors | SOT | 3 | - | - | 34 K |
| BYV79-150 | 150 V, rectifier diode ultrafast | Philips-Semiconductors | SOT | 3 | - | - | 34 K |
| BYV79EB-150 | 150 V, rectifier diode ultrafast, rugged | Philips-Semiconductors | SOT | 3 | - | - | 42 K |
| PSMN030-150B | 150 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 103 K |
| PSMN030-150P | 150 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 97 K |
| PSMN063-150D | 150 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 279 K |
| PSMN085-150K | 150 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 265 K |
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