Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BC807-16W | PNP general purpose transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 67 K |
BC817-16W | NPN general purpose transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 56 K |
BC818-16W | NPN general purpose transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 56 K |
BZG04-160 | Transient voltage suppressor diode. Reverse breakdown voltage (min) 188 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 51 K |
BZG04-160 | Transient voltage suppressor diode. Reverse breakdown voltage (min) 188 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 51 K |
CY7C1316V18-167BZC | 18-Mb DDR-II SRAM two-word burst architecture, 167MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1318V18-167BZC | 18-Mb DDR-II SRAM two-word burst architecture, 167MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1320V18-167BZC | 18-Mb DDR-II SRAM two-word burst architecture, 167MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
PCA80C31BH3-16P | CMOS single-chip 8-bit microcontrollers, 4k x 8 ROMless, 128 x 8 RAM, 1.2 to 16 MHz | Philips-Semiconductors | PDIP | 40 | -40°C | 125°C | 411 K |
WE128K32N-160G4MA | Access time:160 ns; 128K x 32 EEPROM module, SMD 5962-94585 | distributor | CQFP | 68 | -55°C | 125°C | 297 K |
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