| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EFA480C-180F | 8-12V low distortion GaAs power FET | distributor | - | - | - | - | 24 K |
| EPA480C-180F | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 24 K |
| EPA680A-180F | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 24 K |
| EPA960C-180F | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 24 K |
| ISPLSI2128E-180LT176 | 180 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 176 | -55°C | 125°C | 142 K |
| ISPLSI2128VE-180LB208 | 180 MHz 3.V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | BGA | 208 | -55°C | 125°C | 234 K |
| ISPLSI2128VE-180LQ160 | 180 MHz 3.V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | PQFP | 160 | -55°C | 125°C | 234 K |
| ISPLSI2128VE-180LT100 | 180 MHz 3.V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 100 | -55°C | 125°C | 234 K |
| ISPLSI2128VE-180LT176 | 250 MHz 3.V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 176 | -55°C | 125°C | 234 K |
| ISPLSI2192VE-180LB144 | 180 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | BGA | 144 | -55°C | 125°C | 144 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
|---|
