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| Example: max232 |
| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| CM15-2024 | Molded DYAD | distributor | Surface mount | 2 | -40°C | 125°C | 318 K |
| CM15-2025 | Molded DYAD | distributor | Surface mount | 2 | -40°C | 125°C | 318 K |
| CM15-2026 | Molded DYAD | distributor | Surface mount | 2 | -40°C | 125°C | 318 K |
| CY7C1049L-20VM | 20ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 125°C | 224 K |
| SST29EE512-200-4C-WH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | 0°C | 70°C | 326 K |
| SST29EE512-200-4C-WN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | 0°C | 70°C | 326 K |
| SST29EE512-200-4I-WH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | -40°C | 85°C | 326 K |
| SST29EE512-200-4I-WN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | -40°C | 85°C | 326 K |
| SST29LE512-200-4I-WN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | -40°C | 85°C | 326 K |
| TB-20.0 | 20.0 KV High-energy triggered spark gap | distributor | - | 2 | - | - | 77 K |
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