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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EC-20N20N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.distributorTO3PBL3-55°C150°C225 K
EC-20P20P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.distributorTO33-55°C150°C225 K
EC-20P20P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.distributorTO3PBL3-55°C150°C225 K
GAL16V8B-20QJIHigh performance E2CMOS PLD generic array logic, 20ns, quarter powerLattice-Semiconductor-CorporationPLCC20-40°C85°C392 K
GAL16V8B-20QPIHigh performance E2CMOS PLD generic array logic, 20ns, quarter powerLattice-Semiconductor-CorporationDIP20-40°C85°C392 K
PIC-2021SMBInfrared receiver module. Short pulse width acceptable.distributor-3-10°C60°C197 K
PIC-2031SMBInfrared receiver module. Super strong immunity against noise.distributor-3-10°C60°C207 K
PIC-2058SMBInfrared receiver module. Easy to receive signal.distributor-3-10°C60°C188 K
PIC-2063SMBInfrared receiver module. Easy to receive signal.distributor-3-10°C60°C209 K
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