Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3PBL | 3 | -55°C | 150°C | 225 K |
EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 225 K |
EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3PBL | 3 | -55°C | 150°C | 225 K |
GAL16V8B-20QJI | High performance E2CMOS PLD generic array logic, 20ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 20 | -40°C | 85°C | 392 K |
GAL16V8B-20QPI | High performance E2CMOS PLD generic array logic, 20ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 20 | -40°C | 85°C | 392 K |
PIC-2021SMB | Infrared receiver module. Short pulse width acceptable. | distributor | - | 3 | -10°C | 60°C | 197 K |
PIC-2031SMB | Infrared receiver module. Super strong immunity against noise. | distributor | - | 3 | -10°C | 60°C | 207 K |
PIC-2058SMB | Infrared receiver module. Easy to receive signal. | distributor | - | 3 | -10°C | 60°C | 188 K |
PIC-2063SMB | Infrared receiver module. Easy to receive signal. | distributor | - | 3 | -10°C | 60°C | 209 K |
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