| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PSD913F2V-20JI | Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 200ns | SGS-Thomson-Microelectronics | PLCC | 52 | -40°C | 85°C | 476 K |
| PSD913F2V-20MI | Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 200ns | SGS-Thomson-Microelectronics | PQFP | 52 | -40°C | 85°C | 476 K |
| PSD934F2V-20JI | Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 200ns | SGS-Thomson-Microelectronics | PLCC | 52 | -40°C | 85°C | 476 K |
| PSD934F2V-20MI | Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 200ns | SGS-Thomson-Microelectronics | PQFP | 52 | -40°C | 85°C | 476 K |
| PSMN040-200W | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 87 K |
| PSMN057-200B | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 98 K |
| PSMN057-200P | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 92 K |
| PSMN070-200B | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 149 K |
| PSMN070-200P | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 149 K |
| PSMN155-200K | 200 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 273 K |
| PSMN155-200K | 200 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 273 K |
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