| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BR211-200 | 200 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| BR211SM-200 | 200 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| BRS212-200 | 200 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| PSMN155-200K | 200 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 273 K |
| PSMN155-200K | 200 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 273 K |
| SA56606-20GW | 2.0 V, CMOS system reset | Philips-Semiconductors | SO | 5 | -40°C | 85°C | 122 K |
| SA56606-20GW | 2.0 V, CMOS system reset | Philips-Semiconductors | SO | 5 | -40°C | 85°C | 122 K |
| SA56614-20GW | 2.0 V, CMOS system reset | Philips-Semiconductors | SO | 5 | -40°C | 85°C | 112 K |
| SA56614-20GW | 2.0 V, CMOS system reset | Philips-Semiconductors | SO | 5 | -40°C | 85°C | 112 K |
| SMT100-200 | SMT100. Irm = 2microA @ Vrm = 170V,max. Irm = 50microA @ Vr = 200V,max. | distributor | - | - | 0°C | 150°C | 222 K |
| SMT50-200 | SMT50. Irm = 2microA @ Vrm = 180V,max. Irm = 50microA @ Vr = 200V,max. | distributor | - | - | 0°C | 150°C | 221 K |
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