| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK436W-200A | PowerMOS transistor. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 71 K |
| BUK436W-200A | PowerMOS transistor. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 71 K |
| BUK475-200B | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 7 A. | Philips-Semiconductors | SOT186A | 3 | 0°C | 150°C | 73 K |
| BUK554-200B | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 8.2 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 69 K |
| BUK555-200A | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 70 K |
| BUK555-200B | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 70 K |
| BUK564-200A | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 9.2 A. | Philips-Semiconductors | SOT404 | 3 | 0°C | 175°C | 73 K |
| BUK565-200A | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 14 A. | Philips-Semiconductors | SOT404 | 3 | 0°C | 175°C | 74 K |
| BYW29F-200 | Rectifier diode ultrafast. Repetitive peak reverse voltage 200 V. | Philips-Semiconductors | SOD100 | 2 | 0°C | 150°C | 48 K |
| BZG04-200 | Transient voltage suppressor diode. Reverse breakdown voltage (min) 228 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 51 K |
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