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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M27C256B-20F1256 Kbit (32Kb x 8) EPROM, 5V, 200nsSGS-Thomson-MicroelectronicsFDIP280°C70°C107 K
M27C512-20F1512 Kbit (64Kb x 8) EPROM, 5V, 200nsSGS-Thomson-MicroelectronicsFDIP280°C70°C114 K
M27C512-20F3512 Kbit (64Kb x 8) EPROM, 5V, 200nsSGS-Thomson-MicroelectronicsFDIP28-40°C125°C114 K
M27C512-20F6512 Kbit (64Kb x 8) EPROM, 5V, 200nsSGS-Thomson-MicroelectronicsFDIP28-40°C85°C114 K
SMJ4256-20FV262144-bit dynamic random-access memory, 200nsTexas-InstrumentsFV18-55°C110°C947 K
SMJ4256-20FV262144-bit dynamic random-access memory, 200nsTexas-InstrumentsFV18-55°C110°C947 K
WMS128K8L-20FEM20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691distributorQFP32-55°C125°C208 K
WMS128K8L-20FEMA20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691distributorQFP32-55°C125°C208 K
WMS128K8L-20FM20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691distributorQFP36-55°C125°C208 K
WMS128K8L-20FMA20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691distributorQFP36-55°C125°C208 K
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