| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BR211-220 | 220 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| BR211-220 | 220 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| BR211SM-220 | 220 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| BR211SM-220 | 220 V, breakover diode | Philips-Semiconductors | SOD | 2 | - | - | 32 K |
| MAX-225 | 202.5V; 20A ;324KW peak pulse power; high current transient voltage suppressor | distributor | - | 2 | -40°C | 125°C | 816 K |
| MAX20-22.0C | 22.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | - | - | - | 810 K |
| MAX20-22.0CA | 22.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | - | - | - | 810 K |
| MAX40-22.0C | 22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-22.0CA | 22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MPTE-22C | 22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| SMT50-220 | SMT50. Irm = 2microA @ Vrm = 198V,max. Irm = 50microA @ Vr = 220V,max. | distributor | - | - | 0°C | 150°C | 221 K |
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