Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CY7C1049-25VC | 25ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | 0°C | 70°C | 224 K |
CY7C1049-25VI | 25ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 85°C | 224 K |
CY7C1049-25VM | 25ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 125°C | 224 K |
CY7C1049L-25VC | 25ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | 0°C | 70°C | 224 K |
CY7C1049L-25VI | 25ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 85°C | 224 K |
CY7C1049L-25VM | 25ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 125°C | 224 K |
SST29EE512-250-4C-WN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | 0°C | 70°C | 326 K |
SST29EE512-250-4I-WH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | -40°C | 85°C | 326 K |
SST29EE512-250-4I-WN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon-Storage-Technology-Inc- | TSOP | 32 | -40°C | 85°C | 326 K |
TB-25.0 | 25.0 KV High-energy triggered spark gap | distributor | - | 2 | - | - | 77 K |
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