| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL22V10B-25LJ | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-25LPI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
| GAL22V10B-25QJ | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-25QP | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10D-25LJ | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-25LJI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| GAL22V10D-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10D-25QJ | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| << [317] [318] [319] [320] [321] 322 [323] [324] [325] [326] [327] >> |
|---|
