| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 66168-300 | 7V; 40mA; proton radiation tolerant optocoupler: direct replacement for 4N49 | distributor | - | 5 | 0°C | 70°C | 86 K |
| BY249-300 | 300 V, rectifier diode general purpose | Philips-Semiconductors | SOD | 2 | - | - | 35 K |
| BYV74-300 | 300 V, dual rectifier diode ultrafast | Philips-Semiconductors | SOT | 3 | - | - | 41 K |
| BYV74F-300 | 300 V, dual rectifier diode ultrafast | Philips-Semiconductors | SOT | 3 | - | - | 42 K |
| CY7C1318V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| DS1100LU-300 | 3.3V 5-tap economy timing element (delay line), 300ns | Dallas-Semiconductor | uSOP | 8 | -40°C | 85°C | 156 K |
| DS1100LZ-300 | 3.3V 5-tap economy timing element (delay line), 300ns | Dallas-Semiconductor | SO | 8 | -40°C | 85°C | 156 K |
| DS1100M-300 | 5-tap economy timing element (delay line), 300ns | Dallas-Semiconductor | DIP | 8 | -40°C | 85°C | 154 K |
| DS1100U-300 | 5-tap economy timing element (delay line), 300ns | Dallas-Semiconductor | uSOP | 8 | -40°C | 85°C | 154 K |
| DS1100Z-300 | 5-tap economy timing element (delay line), 300ns | Dallas-Semiconductor | SO | 8 | -40°C | 85°C | 154 K |
| << [19] [20] [21] [22] [23] 24 [25] [26] [27] [28] [29] >> |
|---|
