Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AM7201-35JC | High density first-in first-out (FIFO) 512 x 9-bit CMOS memory, 35ns | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 804 K |
AM7201-35PC | High density first-in first-out (FIFO) 512 x 9-bit CMOS memory, 35ns | AMD-Advanced-Micro-Devices | DIP | 28 | 0°C | 70°C | 804 K |
AM7201-35RC | High density first-in first-out (FIFO) 512 x 9-bit CMOS memory, 35ns | AMD-Advanced-Micro-Devices | DIP | 28 | 0°C | 70°C | 804 K |
CXK5814P-35L | 2048-word x 8 bit high speed CMOS static RAM, 35ns, low power | Sony-Semiconductor | DIP | 24 | 0°C | 70°C | 362 K |
WMS128K8L-35CLM | 35ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 | distributor | LCC | 32 | -55°C | 125°C | 208 K |
WMS128K8L-35CLMA | 35ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 | distributor | LCC | 32 | -55°C | 125°C | 208 K |
WMS128K8L-35CM | 55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 | distributor | DIP | 32 | -55°C | 125°C | 208 K |
WMS128K8L-35CM | 55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 | distributor | DIP | 32 | -55°C | 125°C | 208 K |
WMS128K8L-35CMA | 35ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 | distributor | DIP | 32 | -55°C | 125°C | 208 K |
WMS128K8L-35DEMA | 35ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 | distributor | SOJ | 32 | -55°C | 125°C | 208 K |
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