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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4C1M16E5-50JC5V 1M x 16 CM0S DRAM (EDO), 5V power supply, 50ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ420°C70°C617 K
AS4C1M16E5-50JI5V 1M x 16 CM0S DRAM (EDO), 5V power supply, 50ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ42-40°C85°C617 K
AS4C1M16E5-50TC5V 1M x 16 CM0S DRAM (EDO), 5V power supply, 50ns RAS access timeAlliance-Semiconductor-CorporationTSOPII500°C70°C617 K
AS4C1M16E5-50TI5V 1M x 16 CM0S DRAM (EDO), 5V power supply, 50ns RAS access timeAlliance-Semiconductor-CorporationTSOPII50-40°C85°C617 K
CSPPT08-500FChip scale parallel termination arrayCalifornia-Micro-DevicesChip scale8-40°C85°C59 K
CSPPT16-500FChip scale parallel termination arrayCalifornia-Micro-DevicesChip scale8-40°C85°C59 K
CSPPT16-500JChip scale parallel termination arrayCalifornia-Micro-DevicesChip scale8-40°C85°C59 K
CSPPT32-500FChip scale parallel termination arrayCalifornia-Micro-DevicesChip scale8-40°C85°C59 K
CSPPT32-500JChip scale parallel termination arrayCalifornia-Micro-DevicesChip scale8-40°C85°C59 K
HN29W25611T-50H256M AND type flash memory more than 16,057-sector (271,299,072-bit)distributorplastic TSOP I480°C70°C331 K
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