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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
A62S6316G-55S55ns; operating current:40mA;standby current:30uA 64K x 16bit low voltage CMOS SRAMdistributorBGA480°C70°C211 K
A62S6316G-55SI55ns; operating current:40mA;standby current:30uA 64K x 16bit low voltage CMOS SRAMdistributorBGA480°C70°C211 K
A62S6316V-55S55ns; operating current:40mA;standby current:15uA 64K x 16bit low voltage CMOS SRAMdistributorTSOP440°C70°C211 K
A62S6316V-55SI55ns; operating current:40mA;standby current:30uA 64K x 16bit low voltage CMOS SRAMdistributorTSOP440°C70°C211 K
CY62256V-55ZC32K x 8 static RAM, 55ns, wide voltage range: 2.7V-3.6VCypress-SemiconductorTSOP280°C70°C316 K
CY62256VL-55RZC32K x 8 static RAM, 55ns, wide voltage range: 2.7V-3.6V, L-powerCypress-SemiconductorTSOP280°C70°C316 K
CY62256VL-55ZC32K x 8 static RAM, 55ns, wide voltage range: 2.7V-3.6V, L-powerCypress-SemiconductorTSOP280°C70°C316 K
CY62256VLL-55ZC32K x 8 static RAM, 55ns, wide voltage range: 2.7V-3.6V, LL-powerCypress-SemiconductorTSOP280°C70°C316 K
LP621024D-55LLT55ns; operating current:70mA; standby current:50uA; 128 x 8bit CMOS SRAMdistributorDIP320°C70°C184 K
LP621024DM-55LLT55ns; operating current:70mA; standby current:50uA; 128 x 8bit CMOS SRAMdistributorSOP320°C70°C184 K
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