Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GLT6100L08LL-55ST | 55ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
GLT6100L08LL-55TS | 55ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
GLT6100L08SL-55ST | 55ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
GLT6100L08SL-55TS | 55ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
M4A3-256/128-55FAC | 5.5ns: high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
M4A5-128/64-55VC | 5.5ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | TQFP | 144 | -40°C | 85°C | 1 M |
M4A5-64/32-55JC | 5.5ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | PLCC | 44 | -40°C | 85°C | 1 M |
M4A5-64/32-55VC | 5.5ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | TQFP | 144 | -40°C | 85°C | 1 M |
M4A5-64/32-55VC48 | 5.5ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | TQFP | 48 | -40°C | 85°C | 1 M |
M4A5-96/48-55VC | 5.5ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | TQFP | 144 | -40°C | 85°C | 1 M |
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