| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AS4LC4M4E1-60JI | 4M x 4 CM0S DRAM (EDO) family, 60ns RAS access time | Alliance-Semiconductor-Corporation | plastic SOJ | 24 | -40°C | 85°C | 265 K |
| AS4LC4M4E1-60TC | 4M x 4 CM0S DRAM (EDO) family, 60ns RAS access time | Alliance-Semiconductor-Corporation | plastic TSOP | 24 | 0°C | 70°C | 265 K |
| AS4LC4M4E1-60TI | 4M x 4 CM0S DRAM (EDO) family, 60ns RAS access time | Alliance-Semiconductor-Corporation | plastic TSOP | 24 | -40°C | 85°C | 265 K |
| ISPLS1016-60LH/883 | 60 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | JLCC | 44 | -55°C | 125°C | 145 K |
| ISPLS1024-60LH/883 | 60 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | LQFP | 68 | -55°C | 125°C | 147 K |
| ISPLSI1032-60LG/883 | 60 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | CPGA | 84 | -55°C | 125°C | 151 K |
| ISPLSI81080V-60LB272 | 60 MHz 3.3V in-system prommable superBIG high density PLD | Lattice-Semiconductor-Corporation | BGA | 272 | -55°C | 125°C | 333 K |
| ISPLSI81080V-60LB492 | 60 MHz 3.3V in-system prommable superBIG high density PLD | Lattice-Semiconductor-Corporation | BGA | 492 | -55°C | 125°C | 333 K |
| ISPLSI8600V-60LB492 | 60 MHz 3.3V in-system prommable superBIG high density PLD | Lattice-Semiconductor-Corporation | BGA | 492 | -55°C | 125°C | 333 K |
| SB60-60M | 60V, 60A Dual Schottky common cathode Rectifier diode | Semelab-Plc- | TO258 | - | - | - | 9 M |
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