Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GLT4160L04-60J3 | 60ns; 4M x 4 CMOS dynamic RAM with extended data output | distributor | SOJ | 26 | 0°C | 70°C | 576 K |
GLT4160L16-60J4 | 60ns; 1k x 16 CMOS dynamic RAM with extended data output | distributor | SOJ | 42 | 0°C | 70°C | 253 K |
GLT4160L16-60TC | 60ns; 1k x 16 CMOS dynamic RAM with extended data output | distributor | TSOP | 44 | 0°C | 70°C | 253 K |
GLT4160M04-60J3 | 60ns; 4K x 4 CMOS dynamic RAM with extended data output | distributor | SOJ | 26 | 0°C | 70°C | 337 K |
GLT4160M04-60TC | 60ns; 4K x 4 CMOS dynamic RAM with extended data output | distributor | TSOP | 26 | 0°C | 70°C | 337 K |
GLT4160M04E-60J3 | 60ns; 4k x 4 CMOS dynamic RAM with extended data output | distributor | SOJ | 26 | 0°C | 70°C | 337 K |
GLT4160M04E-60TC | 60ns; 4k x 4 CMOS dynamic RAM with extended data output | distributor | TSOP | 26 | 0°C | 70°C | 337 K |
GLT44108-60J4 | 60ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 399 K |
ISPLSI8600V-60LB272 | 60 MHz 3.3V in-system prommable superBIG high density PLD | Lattice-Semiconductor-Corporation | BGA | 272 | -55°C | 125°C | 333 K |
ISPLSI8840-60LB432 | 60 MHz 3.3V in-system prommable superBIG high density PLD | Lattice-Semiconductor-Corporation | BGA | 432 | -55°C | 125°C | 304 K |
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