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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GLT4160L04-60J360ns; 4M x 4 CMOS dynamic RAM with extended data outputdistributorSOJ260°C70°C576 K
GLT4160L16-60J460ns; 1k x 16 CMOS dynamic RAM with extended data outputdistributorSOJ420°C70°C253 K
GLT4160L16-60TC60ns; 1k x 16 CMOS dynamic RAM with extended data outputdistributorTSOP440°C70°C253 K
GLT4160M04-60J360ns; 4K x 4 CMOS dynamic RAM with extended data outputdistributorSOJ260°C70°C337 K
GLT4160M04-60TC60ns; 4K x 4 CMOS dynamic RAM with extended data outputdistributorTSOP260°C70°C337 K
GLT4160M04E-60J360ns; 4k x 4 CMOS dynamic RAM with extended data outputdistributorSOJ260°C70°C337 K
GLT4160M04E-60TC60ns; 4k x 4 CMOS dynamic RAM with extended data outputdistributorTSOP260°C70°C337 K
GLT44108-60J460ns; Ultra low power 128k x 8 CMOS SRAMdistributorTSOP32-40°C85°C399 K
ISPLSI8600V-60LB27260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C333 K
ISPLSI8840-60LB43260 MHz 3.3V in-system prommable superBIG high density PLDLattice-Semiconductor-CorporationBGA432-55°C125°C304 K
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