| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISPLSI3256-70LM | High density programmable logic, 128 I/O pins, 11000 PLD gates, 384 registers, 77MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | 0°C | 70°C | 1 M |
| ISPLSI3256A-70LM | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 77MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | 0°C | 70°C | 163 K |
| ISPLSI3256A-70LQ | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 77MHz | Lattice-Semiconductor-Corporation | PQFP | 160 | 0°C | 70°C | 163 K |
| ISPLSI3256A-70LQI | In-system programmable high density PLD, 128 I/O pins, 11000 PLD gates, 384 registers, 77MHz | Lattice-Semiconductor-Corporation | PQFP | 160 | -40°C | 85°C | 163 K |
| LC35W1000BM-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| PLSI3256-70LM | High density programmable logic, 128 I/O pins, 11000 PLD gates, 384 registers, 77MHz | Lattice-Semiconductor-Corporation | MQFP | 160 | 0°C | 70°C | 1 M |
| T405-700B | 4A TRIACS | SGS-Thomson-Microelectronics | - | - | - | - | 118 K |
| T405-700H | 4A TRIACS | SGS-Thomson-Microelectronics | - | - | - | - | 118 K |
| T405-700H | 4A TRIACS | SGS-Thomson-Microelectronics | - | - | - | - | 118 K |
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