Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HN27C256HFP-85T | 256K (32K x 8-bit) UV and OTP EPROM, 85ns | distributor | SOP | 28 | 0°C | 70°C | 405 K |
MAX40-85.0C | 85.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
MAX40-85.0CA | 85.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
MS62256L-85PC | 32K x 8 CMOS static RAM, 85ns | Mosel-Vitelic | PDIP | 28 | 0°C | 70°C | 371 K |
TC551001BFTL-85L | 131,072 word x 8 bit static RAM, 85ns | Toshiba | TSOP | 32 | 0°C | 70°C | 584 K |
TC551001BTRL-85L | 131,072 word x 8 bit static RAM, 85ns | Toshiba | TSOP | 32 | 0°C | 70°C | 584 K |
WMS512K8L-85CIE | 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -40°C | 85°C | 96 K |
WMS512K8L-85CIEA | 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -40°C | 85°C | 96 K |
WMS512K8L-85CME | 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 96 K |
WMS512K8L-85CMEA | 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 96 K |
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