Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MAX40-26.0C | 26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
MAX40-28.0C | 28.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
MAX40-28.0CA | 28.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
PALCE22V10-25DMB | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | CERDIP | 24 | -55°C | 125°C | 384 K |
PALCE22V10-25JC | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | PLCC | 28 | 0°C | 75°C | 384 K |
PALCE22V10-25JI | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | PLCC | 28 | -40°C | 85°C | 384 K |
PALCE22V10-25KMB | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | CERPACK | 24 | -55°C | 125°C | 384 K |
PALCE22V10-25LMB | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | LCC | 28 | -55°C | 125°C | 384 K |
PALCE22V10-25PC | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | DIP | 24 | 0°C | 75°C | 384 K |
PALCE22V10-25PI | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | DIP | 24 | -40°C | 85°C | 384 K |
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