Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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UFT30-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 19 K |
UFT30-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
VFT150-28 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
VFT300-28 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 24 K |
VFT80-28 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
VHB10-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VHB10-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VHB40-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
VHB40-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VHB50-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
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