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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BYV10-20Schottky barrier diodesPhilips-SemiconductorsSOD81---20 K
PSMN040-200WN-channel TrenchMOS transistorPhilips-SemiconductorsSOT429---86 K
PSMN070-200BN-channel TrenchMOS(TM) transistorPhilips-SemiconductorsSOT404---142 K
PSMN070-200PN-channel TrenchMOS(TM) transistorPhilips-SemiconductorsSOT78---142 K
PSMN130-200DN-channel TrenchMOS(TM) transistorPhilips-SemiconductorsSOT428---143 K
SN74ABT7820-20PH 512 X 18 X 2 BIDIRECTIONAL ASYNCHRONOUS FIFO MEMORYTexas-InstrumentsPH800°C70°C196 K
SN74ABT7820-20PN 512 X 18 X 2 BIDIRECTIONAL ASYNCHRONOUS FIFO MEMORYTexas-InstrumentsPN800°C70°C196 K
TIBPAL22V10-20MFKB HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITSTexas-InstrumentsFK28-55°C125°C164 K
TIBPAL22V10-20MJTB HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITSTexas-InstrumentsJT24-55°C125°C164 K
TIBPAL22V10-20MJTB HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITSTexas-InstrumentsJT24-55°C125°C164 K
TIBPAL22V10-20MJTB HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITSTexas-InstrumentsJT24-55°C125°C164 K
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