Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BYV10-20 | Schottky barrier diodes | Philips-Semiconductors | SOD81 | - | - | - | 20 K |
PSMN040-200W | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT429 | - | - | - | 86 K |
PSMN070-200B | N-channel TrenchMOS(TM) transistor | Philips-Semiconductors | SOT404 | - | - | - | 142 K |
PSMN070-200P | N-channel TrenchMOS(TM) transistor | Philips-Semiconductors | SOT78 | - | - | - | 142 K |
PSMN130-200D | N-channel TrenchMOS(TM) transistor | Philips-Semiconductors | SOT428 | - | - | - | 143 K |
SN74ABT7820-20PH | 512 X 18 X 2 BIDIRECTIONAL ASYNCHRONOUS FIFO MEMORY | Texas-Instruments | PH | 80 | 0°C | 70°C | 196 K |
SN74ABT7820-20PN | 512 X 18 X 2 BIDIRECTIONAL ASYNCHRONOUS FIFO MEMORY | Texas-Instruments | PN | 80 | 0°C | 70°C | 196 K |
TIBPAL22V10-20MFKB | HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITS | Texas-Instruments | FK | 28 | -55°C | 125°C | 164 K |
TIBPAL22V10-20MJTB | HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITS | Texas-Instruments | JT | 24 | -55°C | 125°C | 164 K |
TIBPAL22V10-20MJTB | HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITS | Texas-Instruments | JT | 24 | -55°C | 125°C | 164 K |
TIBPAL22V10-20MJTB | HIGH-PERFORMANCE IMPACT-X(TM) PROGRAMMABLE ARRAY LOGIC CIRCUITS | Texas-Instruments | JT | 24 | -55°C | 125°C | 164 K |
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