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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUK7610-3030 V, tranch MOS transistor standard level FETPhilips-SemiconductorsSOT3-55°C175°C53 K
BUK7830-3030 V, tranch MOS transistor standard level FETPhilips-SemiconductorsSOT4-55°C175°C58 K
BUK9510-3030 V, tranch MOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C49 K
BUK9610-3030 V, tranch MOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C52 K
BUK9830-3030 V, tranch MOS transistor logic level FETPhilips-SemiconductorsSOT4-55°C150°C56 K
BUK9830-3030 V, tranch MOS transistor logic level FETPhilips-SemiconductorsSOT4-55°C150°C56 K
MAX20-30.0CA30.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applicationsdistributor----810 K
MAX40-30.0C30.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applicationsdistributor-2--810 K
MAX40-30.0CA30.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applicationsdistributor-2--810 K
SA57000-30D3.0 V, capFREE 150 mA, low-noise, low dropout regulatorPhilips-SemiconductorsSO5-40°C85°C104 K
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