| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BY550-50 | Silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 175°C | 49 K |
| HF150-50F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 23 K |
| HF150-50S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| HF220-50 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| HF220-50F | NPN RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -55°C | 200°C | 20 K |
| HF250-50 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| MSM5718B70-50GS-K | 18-Megabit RDRAM (2Mx9) | distributor | SHP | 32 | 0°C | 100°C | 260 K |
| VFT150-50 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| VFT30-50 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| VFT300-50 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 20 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
|---|
