| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS62LV8000BC | 70/100ns 30-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 1M x 8bit | distributor | BGA | 48 | 0°C | 70°C | 220 K |
| BS62LV8000BI | 70/100ns 30-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 1M x 8bit | distributor | BGA | 48 | -40°C | 70°C | 220 K |
| FG4000BX-90DA | 4500V, 4000A phase control asymmetrical thyristor | distributor | - | - | - | - | 71 K |
| FG4000BX-90DA | 4500V, 4000A phase control asymmetrical thyristor | distributor | - | - | - | - | 71 K |
| KM416C4000BS-45 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| KM416C4000BS-5 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| KM416C4000BS-6 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| KM416V1000BJL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 84 K |
| KM416V1000BTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1000BTL-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
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