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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AD52000BD+-18V; 12-bit successive approximation high accuracy A/D converterAnalog-DevicesDIP24-25°C85°C637 K
KM48C2000BK-52M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50nsSamsung-ElectronicSOJ280°C70°C79 K
KM48C2000BK-62M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60nsSamsung-ElectronicSOJ280°C70°C79 K
KM48C2000BK-72M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70nsSamsung-ElectronicSOJ280°C70°C79 K
KM48C2000BKL-72M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70nsSamsung-ElectronicSOJ280°C70°C79 K
KM48C2000BS-52M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50nsSamsung-ElectronicTSOP II280°C70°C79 K
KM48C2000BS-62M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60nsSamsung-ElectronicTSOP II280°C70°C79 K
KM48C2000BS-72M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70nsSamsung-ElectronicTSOP II280°C70°C79 K
KM48C2000BSL-62M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60nsSamsung-ElectronicTSOP II280°C70°C79 K
LC35V1000BMAsynchronous Silicon Gate 1M (131,072 words x8 bits) SRAMSANYO-Electric-Co--Ltd-----178 K
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