Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AD52000BD | +-18V; 12-bit successive approximation high accuracy A/D converter | Analog-Devices | DIP | 24 | -25°C | 85°C | 637 K |
KM48C2000BK-5 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48C2000BK-6 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48C2000BK-7 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48C2000BKL-7 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 79 K |
KM48C2000BS-5 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
KM48C2000BS-6 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
KM48C2000BS-7 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
KM48C2000BSL-6 | 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 79 K |
LC35V1000BM | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 178 K |
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