| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK446-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 1.5 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 63 K |
| BUK456-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 3.1 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | -- |
| LC35V1000BTS | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 178 K |
| LC35W1000BM-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BM-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
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