| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK436W-1000B | PowerMOS transistor. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 69 K |
| BUK436W-1000B | PowerMOS transistor. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 69 K |
| BUK438-1000B | N-channel power MOS transistor, 1000V, 5.7A | Philips-Semiconductors | - | 3 | -55°C | 150°C | 134 K |
| KM684000BLGI-5 | 512Kx8 bit CMOS static RAM, 55ns | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLGI-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLGI-7 | 512Kx8 bit CMOS static RAM, 70ns | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLGI-7L | 512Kx8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLRI-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | - | 32 | -40°C | 85°C | 171 K |
| KM684000BLTI-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | - | 32 | -40°C | 85°C | 171 K |
| KM684000BLTI-7L | 512Kx8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | - | 32 | -40°C | 85°C | 171 K |
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