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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
E28F001BX-T1201-Mbit(128K x 8) boot block flash memory. Access speed 120 nsIntel-CorporationTSOP320°C70°C436 K
E28F001BX-T1501-Mbit(128K x 8) boot block flash memory. Access speed 150 nsIntel-CorporationTSOP320°C70°C436 K
E28F001BX-T701-Mbit(128K x 8) boot block flash memory. Access speed 70 nsIntel-CorporationTSOP320°C70°C436 K
E28F001BX-T901-Mbit(128K x 8) boot block flash memory. Access speed 90 nsIntel-CorporationTSOP320°C70°C436 K
MGF1001BTTape carrier microwave power GaAs fetMitsubishi-Electric-Corporation-Semiconductor-Group-3--153 K
R5310L001BMulti LDO for cellular-phonedistributorLQFP32-40°C85°C270 K
RV5VE001B-E1Multy-power supply IC. Taping type E1distributorSSOP16-30°C80°C321 K
RV5VE001B-E2Multy-power supply IC. Taping type E2distributorSSOP16-30°C80°C321 K
TDA1001BInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
TDA1001BInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
TDA1001BInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
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