| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AF002N2-32 | GaAs IC 15dB voltage variable attenuator single control DC-2 GHz | distributor | SOT | 4 | -40°C | 85°C | 22 K |
| AT002N5-00 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | distributor | - | - | -55°C | 125°C | 134 K |
| AT002N5-00 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | distributor | - | - | -55°C | 125°C | 134 K |
| AT002N5-11 | GaAs 50 dB IC voltage variable dual control attenuator DC-3 GHz | distributor | Surface mount | 8 | -55°C | 125°C | 46 K |
| EN29F002NT-45P | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | PDIP | 32 | 0°C | 70°C | 267 K |
| EN29F002NT-55P | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | PDIP | 32 | 0°C | 70°C | 267 K |
| EN29F002NT-70P | 2 Megabit (256K x 8-bit) flach memory. Speed 70ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | PDIP | 32 | 0°C | 70°C | 267 K |
| HSH1002NEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 46 K |
| HSH1002NILO | Lamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 46 K |
| HSH2002NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 43 K |
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