Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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LH28F002SCHN-L170 | 2-MBIT (256KB x 8) smart voltage flash memory | Sharp | PSOP | 44 | -40°C | 85°C | 3 M |
LH28F002SCHT-L120 | 2-MBIT (256KB x 8) smart voltage flash memory | Sharp | TSOP | 40 | -40°C | 85°C | 3 M |
LH28F002SCHT-L150 | 2-MBIT (256KB x 8) smart voltage flash memory | Sharp | TSOP | 40 | -40°C | 85°C | 3 M |
LH28F002SCHT-L170 | 2-MBIT (256KB x 8) smart voltage flash memory | Sharp | TSOP | 40 | -40°C | 85°C | 3 M |
LH28F002SCHT-L85 | 2-MBIT (256KB x 8) smart voltage flash memory | Sharp | TSOP | 40 | -40°C | 85°C | 3 M |
LH28F002SCHT-L90 | 2-MBIT (256KB x 8) smart voltage flash memory | Sharp | TSOP | 40 | -40°C | 85°C | 3 M |
M38002SFP | Single-chip 8-bit microcfomputer. External ROM type. RAM 640 bytes | Mitsubishi-Electric-Corporation-Semiconductor-Group | Plastic QFP | 64 | -20°C | 85°C | 4 M |
M38002SSP | Single-chip 8-bit microcfomputer. External ROM type. RAM 640 bytes | Mitsubishi-Electric-Corporation-Semiconductor-Group | Plastic SDIP | 64 | -20°C | 85°C | 4 M |
PACDN002S | 17 channel ESD protection array | California-Micro-Devices | SOIC | 20 | -20°C | 85°C | 137 K |
PDN002S | 17 channel ESD protection array | California-Micro-Devices | SOIC | 20 | - | - | 37 K |
[1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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