| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM44C4003CK-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CK-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CKL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CKL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CS-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4003CS-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4003CS-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4003CSL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| PTB32003X | 40 V, NPN microware power transistor | Philips-Semiconductors | SOT | 3 | - | - | 66 K |
| TDA8003TS/C1 | 6 V, I2C-bus SIM card interface | Philips-Semiconductors | SSOP | 24 | -40°C | 85°C | 122 K |
| TDA8003TS/C2 | 6 V, I2C-bus SIM card interface | Philips-Semiconductors | SSOP | 24 | -40°C | 85°C | 122 K |
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