| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MABAES0031 | 1-650 MHz, RF 4:1 flux coupled transformer | M-A-COM---manufacturer-of-RF | SM | 5 | -40°C | 85°C | 47 K |
| MRF10031 | Microwave long pulse power transistor | Motorola | - | 3 | - | - | 101 K |
| MRF10031MB | 30 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 163 K |
| PTB20031 | 40 watts, 420-470 MHz RF power transistor | Ericsson-Microelectronics | 20200 | 6 | - | - | 44 K |
| PTF10031 | 50 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 4 | - | - | 215 K |
| S6A0031 | 8com/80seg driver & controller for STN LCD | Samsung-Electronic | Gold bumped chip | 144 | -30°C | 85°C | 339 K |
| SRD00314A | Ternary PIN photodiode with blocking filter | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 118 K |
| SRD00314G | Ternary PIN photodiode with blocking filter | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 118 K |
| SRD00315A | Ternary PIN photodiode with blocking filter | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 118 K |
| SRD00315G | Ternary PIN photodiode with blocking filter | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 118 K |
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