| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS2004/18 | Rectifier diode. All purpose high power rectifier diodes, non-controllable and haft controlled rectifiers. Free-wheeling diodes & traction. Vrrm = 1800V, Vrsm = 1900V. | distributor | F | 2 | 0°C | 175°C | 96 K |
| KM416C1004CJL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CJL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CT-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1004CTL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1004CTL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1004CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
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