Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416V1004AJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AJ-L7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AR-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AR-F6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AT-F7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
MCP6004-I/P | 1 MHz bandwidth, low power operational amplifier | Microchip-Technology-Inc- | PDIP | 14 | -40°C | 85°C | 553 K |
MCP6004-I/P | 1 MHz bandwidth, low power operational amplifier | Microchip-Technology-Inc- | PDIP | 14 | -40°C | 85°C | 553 K |
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