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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416V1004AJ-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicSOJ420°C70°C1 M
KM416V1004AJ-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicSOJ420°C70°C1 M
KM416V1004AJ-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicSOJ420°C70°C1 M
KM416V1004AJ-L73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicSOJ420°C70°C1 M
KM416V1004AR-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicTSOP II440°C70°C1 M
KM416V1004AR-F63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicTSOP II440°C70°C1 M
KM416V1004AT-73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicTSOP II440°C70°C1 M
KM416V1004AT-F73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicTSOP II440°C70°C1 M
MCP6004-I/P1 MHz bandwidth, low power operational amplifierMicrochip-Technology-Inc-PDIP14-40°C85°C553 K
MCP6004-I/P1 MHz bandwidth, low power operational amplifierMicrochip-Technology-Inc-PDIP14-40°C85°C553 K
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