Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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LX1004C-1.2LP | Voltage Reference - Micropower | Microsemi-Corporation | - | - | - | - | 151 K |
LX1004C-2.5LP | Voltage Reference - Micropower | Microsemi-Corporation | - | - | - | - | 151 K |
MJE18004D2 | High speed, high gain bipolar NPN power transistor | Motorola | - | 4 | -65°C | 150°C | 466 K |
MXP1004PS/D | Photovoltaic Detectors | Microsemi-Corporation | SEE_FACTORY | - | - | - | 39 K |
SPX1004N | Precision voltage reference | Sipex-Corporation | - | 3 | 0°C | 70°C | 146 K |
SPX1004S | Precision voltage reference | Sipex-Corporation | SOIC | 8 | 0°C | 70°C | 146 K |
ULN2004A | High-voltage, high-current darlington arrays | Allegro-MicroSystems-Inc- | DIP | 16 | -20°C | 85°C | 176 K |
ULN2004L | High-voltage, high-current darlington arrays | Allegro-MicroSystems-Inc- | SOIC | 16 | -20°C | 85°C | 176 K |
ULQ2004A | High-voltage, high-current darlington arrays | Allegro-MicroSystems-Inc- | DIP | 16 | -40°C | 85°C | 176 K |
ULQ2004L | High-voltage, high-current darlington arrays | Allegro-MicroSystems-Inc- | SOIC | 16 | -40°C | 85°C | 176 K |
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