| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ED1004CT | Super fast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=75degC) 10.0A. | distributor | - | 4 | -55°C | 150°C | 35 K |
| ER1004CT | Superfast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=100degC) 10.0A. | distributor | - | 3 | -55°C | 150°C | 57 K |
| KM416C1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJ-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJ-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CT-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CT-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CTL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
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