| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AHA4012B-006PJC | Error correction device | Advanced-Hardware-Architectures | PLCC | 44 | 0°C | 70°C | 457 K |
| AHA4012B-006PJI | Error correction device | Advanced-Hardware-Architectures | PLCC | 44 | -40°C | 85°C | 457 K |
| MB84VA2006-10 | MCP (multi-chip package) flash memory & SRAM 8M(x8/x16) flash memory & 1M(x8) static RAM | Fujitsu-Microelectronis | plastic BGA | 48 | -20°C | 85°C | 393 K |
| MBM30LV0064-PFTN | Flash memory CMOS 64M (8M x 8)bit NAND-type | Fujitsu-Microelectronis | - | 44 | -40°C | 85°C | 397 K |
| MBM30LV0064-PFTR | Flash memory CMOS 64M (8M x 8)bit NAND-type | Fujitsu-Microelectronis | - | 44 | -40°C | 85°C | 397 K |
| MC14006BCL | 18-bit static shift register | Motorola | DIP | 14 | -55°C | 125°C | 223 K |
| MC14006BCP | 18-bit static shift register | Motorola | PDIP | 14 | -55°C | 125°C | 223 K |
| MJH16006A | NPN silicon power transistor | Motorola | - | 4 | -55°C | 150°C | 337 K |
| MRF20060 | RF power bipolar transistor | Motorola | - | 3 | - | - | 109 K |
| MRF20060S | RF power bipolar transistor | Motorola | - | 3 | - | - | 109 K |
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