| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4007G | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. | distributor | - | 2 | -65°C | 150°C | 135 K |
| 1N4007G | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. | distributor | - | 2 | -65°C | 150°C | 135 K |
| 1N4007G | 1000 V, rectifier | Philips-Semiconductors | SOD | 2 | -65°C | 175°C | 40 K |
| 1N4007G | Rectifier. Repetitive peak reverse voltage 1000 V. | Philips-Semiconductors | SOD57 | 2 | -65°C | 175°C | 53 K |
| 1N4007GP | 1000 V, 1A glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 53 K |
| 1N4007GP | 1.0A, 1000V ultra fast recovery rectifier | distributor | - | - | - | - | 79 K |
| SL4007GTR | 1000 V, 1.0 A silicon rectifier | distributor | DO | 2 | - | - | 53 K |
| UF4007G | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 150°C | 164 K |
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