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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K6T4008U1C-MB10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008U1C-MB70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008U1C-MB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008U1C-TB70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008U1C-TB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008U1C-VB10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008U1C-VB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008V1C-GB70512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-powerSamsung-ElectronicSOP320°C70°C186 K
K6T4008V1C-GB85512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-powerSamsung-ElectronicSOP320°C70°C186 K
K6T4008V1C-TB70512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-powerSamsung-Electronic-320°C70°C186 K
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