| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T4008U1C-MF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-MF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-TF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-TF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-VF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-VF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-VF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 186 K |
| K6T4008U1C-YB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-GF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 186 K |
| K6T4008V1C-GF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 186 K |
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