| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T1008C2E-DB55 | 128Kx8 bit, 55ns low low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-DB70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-DL55 | 128Kx8 bit, 55ns low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T1008C2E-DL70 | 128Kx8 bit, 70ns low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| M5M5V008CKR-55HI | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 87 K |
| M5M5V008CKR-55XI | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 87 K |
| M5M5V008CKR-55XI | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 87 K |
| M5M5V008CKR-70HI | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 87 K |
| M5M5V008CKR-70XI | 1048576-bit (131072-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 87 K |
| R5310L008B | Multi LDO for cellular-phone | distributor | LQFP | 32 | -40°C | 85°C | 270 K |
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