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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K6T1008C2E-GF55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
K6T1008C2E-GF70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
K6T1008C2E-RF55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicTSOP32-40°C85°C190 K
K6T1008C2E-RF70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicTSOP32-40°C85°C190 K
K6T1008C2E-TF55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicTSOP32-40°C85°C190 K
K6T1008C2E-TF70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicTSOP32-40°C85°C190 K
M5M51008DFP-55H1048576-bit (131072-word by 8-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOP320°C70°C61 K
M5M51008DFP-70H1048576-bit (131072-word by 8-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOP320°C70°C61 K
M5M51008DVP-55H1048576-bit (131072-word by 8-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C61 K
M5M51008DVP-70H1048576-bit (131072-word by 8-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C61 K
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